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Dual Dopant Source DCS 63-2x5-27 for Si and Be on one DN63 CF flange, with two conical 5cc crucibles, individual cell shutters and water cooling between the cells

• Cluster sources increase the capacity of UHV systems
• Customized designs with all kind of effusion cells
• Compact and intelligent cell design
• Various crucibles available
• Solutions with integrated cooling shrouds and shutters

Cluster sources provide a convenient method for adding MBE capabilities into your UHV chamber or MBE system, either as dopant or thin-film deposition source. Because of the large variety of different UHV systems each cluster is individually designed for our customers' systems.

We build cluster source flanges based on our standard cells. A large variety of clusters with two or more different cells mounted even on a small flange is offered.
Specially designed thermal shielding featuring water-cooled shields between the individual cells reduces thermal interaction. Cross contamination is minimized by the use of individual, non-overlapping shutters.

A brief selection of different cluster sources is presented in the following. Some thinkable applications for our cluster sources are shown as examples. Please contact us for more information about custom-made solutions.


A Dual Dopant Source used for Si and Be doping on a single DN63 CF (O.D. 4.5") port is presented in the picture on the right.
The use of dual dopant sources increases the capacity of MBE systems, e.g. GEN II, by using only a single port for both Be and Si doping. After melting the source material in an upwards position the cells can be used in downward oriented ports. For easier melting of the source material we deliver a special set of PBN and Ta shielding parts.

Dual Dopant Source on a DN63 (O.D. 4.5") CF-flange,
including two cell shutters with soft-acting shutter modules

The up to now smallest dual dopant source is built on a DN40 CF (O.D. 2.75") flange and houses 2 x 0.6 cm³ crucibles and one rotary motion shutter.
Different crucible materials and thermocouples can be used, rendering the DCS 40-2x1-14 a versatile tool for deposition of various materials (from organic molecules to transition metals) onto small substrates in, for example, STM preparation chambers.

Dual Dopant Source DCS 40-2x1-14 on DN40 CF flange

The double cluster source with 2 x 5.6 cm³ PBN crucibles shown on the right is mounted on a DN63 CF (O.D. 4.5") flange. It is equipped with a special water cooling between the two small effusion cells and with a rotary motion shutter for each cell.
This design is favorable in horizontal mounting position where there is the risk of material falling down from the crucible.

Double Cluster Source on DN63 CF flange

The combination of a mini high temperature effusion cell HTEZ and a standard effusion cell WEZ, mounted on a DN63 CF (O.D. 4.5") flange is shown in the picture on the right hand side.
The HTEZ includes an 1.5 cm³ Al₂O₃ crucible, while the WEZ is equipped with a 10 cm³ PBN crucible. The integrated water cooling shroud prevents heating of the chamber as well as thermal interaction of the individual cells. The two separate shutters allow independent operation with minimized cross contamination.

Mixed Cell Cluster Source on DN63 CF flange

Two single standard effusion cells WEZ, with a 10 cm³ PBN crucible in each cell, are mounted in an angled position to allow the use of a horizontal port below the substrate. Each cell is equipped with an individual linear shutter.

Cluster source with vertically mounted heaters
on a DN100 CF base flange

 LAST UPDATE: OCTOBER, 2009

© 2003 Dr. Eberl MBE-Komponenten GmbH