Please visit the booths of MBE-Komponenten and our USA distributor UMC at the 27th North American Molecular Beam Epitaxy Conference September 26-29, 2010 in Breckenridge, Colorado.

In August 22-27, 2010 the 16th International Conference on Molecular Beam Epitaxy will be held in Berlin. We appreciate the opportunity to welcome the MBE community in our home country's capital.

In order to present our novel, innovative evaporation solutions to our European customers we take the opportunity to exhibit at the E-MRS 2010 Spring Meeting in Strasbourg, France (June 8-10, 2010).

We would like to invite you to visit our booth at the 2010 MRS Spring Meeting in San Francisco, California (Exhibit April 6-8, 2010).

MBE-Komponenten GmbH attends the physics exhibition during the DPG spring conference 2010 (March 23-25, Regensburg). We are looking forward to meet you at our booth.

The German MBE Workshop for Molecular Beam Epitaxy 2009 will take place at the Ruhr-Universität Bochum from Sept. 30th to Oct. 1st. Participating in this workshop as a sponsor we would like to invite you to meet us there.

The passionate skiers among the MBE community will certainly visit the 15th European Molecular Beam Epitaxy Workshop held from March 8-11, 2009 in Zakopane (PL). We too look forward to this event and will welcome you at our booth.

The 14th International Conference on Solid Films and Surfaces ICSFS-14 will be held June 29 - July 4, 2008 in Dublin (Ireland). Please take the opportunity to have a look at our latest products by visiting our booth.

On 2-6 July 2007 the joint congress IVC17/ICSS13 & ICN+T2007 will take place in Stockholm, Sweden. MBE-Komponenten is going to attend this congress and would like to invite you to meet us there.

MARCH-2009:
CIGS production cells with high throughput and long-term Se resistance, dedicated to solar cell thin film deposition, are now available. Key benefits are beam shaping inserts for high material efficiency and defect reducing indirect Cu evaporation, as well as a fully serviceable design.

FEBRUARY-2008:
At the request of many customers for a small but nonetheless complete RTA oven the Compact Rapid Thermal Annealing System AO 500 has been reissued. Its applications are RTA processing, ohmic contact formation and diffusion processes at operating temperatures up to 500°C.

MAY-2007:
MBE-Komponenten delivered the first new generation Hg source to the Fraunhofer Institute for Applied Solid-State Physics in Freiburg. The HGS is designed for II-VI Hg MBE, e.g. production of MCT devices. The use of three separate heater-circuits provides excellent long-term flux control and temperature stability.

JUL-2006:
The new Oxygen Atom Beam Source OBS enlarges our program of gas sources. The OBS produces an ion-free atomic oxygen beam for use in various atomic oxygen applications, e.g. surface oxidation, oxide layer deposition or surface science.

DEC-2005:
The Si-shielded Vertical Electron E-Beam Evaporator EBVV-B allows Boron-doping up to 10²¹/ccm. It is optimized for the evaporation of Si-B alloy or high-purity Boron source material in Si/SiGe MBE with high deposition rates up to one µm/h.

APRIL-2005:
Dr. Eberl MBE-Komponenten has redesigned its Carbon Sublimation Source SUKO in collaboration with Prof. Wegscheider of the University of Regensburg (Germany). The new SUKO-D represents the next generation of C-doping sources, providing minimized heat load and long filament lifetime.

AUG-2004:
The In-situ Etching System - ISES - is a fully UHV and MBE compatible gas source system for AsBr3 in-situ etching. The etching mechanism provides atomic layer precise manipulation of thin films and nanostructures. A new system with a second etching material option was installed at Naval Reseach Lab.

MAR-2004: Compact Effusion Cells for thin film deposition or MBE in reseach UHV Systems are available. The Compact Effusion Cells includes water cooling and shutter on DN40CF (O.D. 2.75''). Precise temperature measurement and control produces very stable and reproducible growth rates.