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General Information
Doping applications in Molecular Beam Epitaxy generally require low flux rates together with low quantities of dopant materials.
A typical doping flux is about 3 to 5 orders of magnitude smaller than typical growth material flux.
Therefore doping cells can be built much more compact, resulting in a lower power consumption compared
to standard effusion cells. A low thermal pollution of the MBE system and a stable and reproducible temperature
control is achieved even at high operation temperatures. The compact cell design - a key performance provided
by MBE Komponenten GmbH - makes our multi material clusters ideally qualified for MBE doping applications.
See an example in the picture. A large area uniformity of the doping level on your substrate is obtained by using
conically shaped crucibles. With a tapering angle of 10°, doping uniformity of about 1% is reached on
a 3" substrate at a distance of 150 mm.
Doping Source Selection
The following tables want to be a selection guide for our customers to find the suitable MBE source for various
doping applications. Please contact us for assistance with special doping requirements. Our MBE specialists will
find the optimal solution for your application.
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Compact design of our effusion cells; view onto a double doping cluster source
for Si and Be, on a single DN63 CF (O.D. 4.5") flange, with two cell shutters and
water cooling between the cells |
